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FQA11N90 - 900V N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

Features

  • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max. ) @ VGS = 10 V, ID = 5.7 A.
  • Low Gate Charge (Typ. 72 nC).
  • Low Crss (Typ. 30 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Full PDF Text Transcription

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FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ April 2013 Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A • Low Gate Charge (Typ. 72 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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