FLLD261 Datasheet (Fairchild Semiconductor) - HIGH CONDUCTANCE LOW LEAKAGE DIODE

FLLD261, HIGH CONDUCTANCE LOW LEAKAGE DIODE

FLLD261 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD .

.350 mW @ TA = 25 Deg C BV .

.200 V (MIN) @ IR = 5 uA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature -55 to +150 Degrees C -55 to +150 Degrees C PACKAGE TO-236AB (Low) 3 P8A 1 2 CONNECTION DIAGRAMS 3 POWER DISSIPATION (NOTES 2 & 3) Total Device Dissipation at TA = 25 Deg C Derating Factor per Degree C 350 mW 2.8 mW 1 2 VOLTAGES & CURRENTS WIV Working Inverse Voltage IO Average Rectifie