FJD3076 Datasheet (Fairchild Semiconductor) - NPN Epitaxial Silicon Transistor

FJD3076, NPN Epitaxial Silicon Transistor

FJD3076 FJD3076 Power Amplifier Applications Low Collector-Emitter Saturation Voltage 1 D-PACK 1.

Base 2.

Collector 3.

Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 40 32 5 2 1 10 150 - 55