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FGPF70N30TTU - 70A PDP IGBT

Download the FGPF70N30TTU datasheet PDF. This datasheet also covers the FGPF70N30T variant, as both devices belong to the same 70a pdp igbt family and are provided as variant models within a single manufacturer datasheet.

Description

Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

PD TJ Tstg TL Description Collector-Em

Features

  • High current capability.
  • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A.
  • High input impedance.
  • Fast switching.
  • RoHS complaint.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FGPF70N30T-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (onsemi)

Part Number Description
FGPF70N30T 70A PDP IGBT
FGPF70N30 PDP IGBT
FGPF7N60LSD Low Saturation IGBT CO-PAK
FGPF7N60RUFD RUF IGBT CO-PAK
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FGPF70N30T 300V, 70A PDP Trench IGBT FGPF70N30T 300V, 70A PDP IGBT Features • High current capability • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A • High input impedance • Fast switching • RoHS complaint Application . PDP System June 2007 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. GC E TO-220F Absolute Maximum Ratings Symbol VCES VGES IC pulse(1)* PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 25oC @ TC = 100oC Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.
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