FDZ4670 Datasheet (Fairchild Semiconductor)

FDZ4670, N-Channel MOSFET

Combining Farichild’s 30V PowerTrench process with state-ofthe-art BGA packaging, the FDZ4670 minimize both PCB space and rDS(on) .

This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing cap

FDZ4670 Features

* Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 25A

* Max rDS(on) = 4.5mΩ at VGS = 4.5V, ID = 18.5A

* Ultra-thin package: less than 0.85mm height when mounted to PCB

* Outstanding thermal transfer characteristics

* Ultra-low gate charge x rDS(on) product

* Ro