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FDU8778 - N-Channel MOSFET

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FDU8778 Product details

Description

Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V Low gate resistance This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on) and fast switching speed. RoHS compliant AD FREE I Appli

Features

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