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FDU3706 - 20V N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

Features

  • 50 A, 20 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 11 mΩ @ VGS = 4.5 V RDS(ON) = 16 mΩ @ VGS = 2.5 V.
  • Low gate charge (16 nC).
  • Fast Switching.
  • High performance trench technology for extremely low RDS(ON) D G DTO-P-A25K2 (TO-252) GDS I-PAK (TO-251AA) G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C (Note 3) (N.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD3706/FDU3706 March 2015 FDD3706/FDU3706 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Applications • DC/DC converter • Motor Drives Features • 50 A, 20 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 11 mΩ @ VGS = 4.5 V RDS(ON) = 16 mΩ @ VGS = 2.
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