FDS9435A - 30V P-Channel Power Trench MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDS9435A
Manufacturer	Fairchild Semiconductor
File Size	89.00 KB
Description	30V P-Channel Power Trench MOSFET
Datasheet	FDS9435A_FairchildSemiconductor.pdf

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

-5.3 A, -30 V, RDS(ON) = 0.045 Ω @ VGS = -10 V, RDS(ON) = 0.075 Ω @ VGS = - 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D S F D 5A 3 94 pin 1 5 6 S G 4 3 2 1 7 8 SO-8 S S Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwise noted FDS9435A Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain.

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Published: Mar 30, 2005 |