Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
-
10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V RDS(ON) = 0.017 Ω @ VGS = 6 V.
Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D
D
D
5 6 4 3 2 1
SO-8
Symbol
VDSS VGSS ID PD
S
S
S
G
7 8
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
60
(Note 1a)
Units
V V A W
±20 10 50 2.5 1.
FDS5670_FairchildSemiconductor.pdf
