FDS3590 - N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

• 6.5 A, 80 V RDS(ON) = 39 mΩ @ VGS = 10 V RDS(ON) = 44 mΩ @ VGS = 6 V.
• Low gate charge.
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
• Continuous.
• Pulsed (Note 1a) PD Power Dissipat.