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FDPF7N50F - N-Channel MOSFET

Download the FDPF7N50F datasheet PDF (FDP7N50F included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) = 0.95Ω ( Typ. )@ VGS = 10V, ID = 3A.
  • Low gate charge ( Typ. 15nC).
  • Low Crss ( Typ. 6.3pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant tm.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDP7N50F_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

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FDP7N50F / FDPF7N50F N-Channel MOSFET November 2007 UniFETTM FDP7N50F / FDPF7N50F N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features • RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A • Low gate charge ( Typ. 15nC) • Low Crss ( Typ. 6.3pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
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