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FDP8878 - N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to

Features

  • rDS(ON) = 15mΩ, VGS = 10V, ID = 40A.
  • rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.
  • High power and current handling capability.
  • RoHS Compliant www. DataSheet4U. com improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. D DRAIN (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP8878 N-Channel PowerTrench® MOSFET November 2005 FDP8878 N-Channel Logic Level PowerTrench® MOSFET 30V, 40A, 15mΩ General Descriptions This N-Channel MOSFET has been designed specifically to Features „ rDS(ON) = 15mΩ, VGS = 10V, ID = 40A „ rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge „ High power and current handling capability „ RoHS Compliant www.DataSheet4U.com improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
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