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FDP150N10 - N-Channel MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Battery Prote

Features

  • RDS(on) = 12 mΩ ( Typ. ) @ VGS = 10 V, ID = 49 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant General.

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Full PDF Text Transcription

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FDP150N10 N-Channel PowerTrench® MOSFET March 2013 FDP150N10 N-Channel PowerTrench® MOSFET 100 V, 57 A, 15 mΩ Features • RDS(on) = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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