FDP047N08 - N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDP047N08
Manufacturer	Fairchild Semiconductor
File Size	608.44 KB
Description	N-Channel MOSFET
Datasheet	FDP047N08_FairchildSemiconductor.pdf

FDP047N08 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.Symbol Parameter FDP047N08 VDSS VGSS

Features

RDS(on) = 3.8 mΩ (Typ. ) @ VGS = 10 V, ID = 80 A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant.

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Published: Dec 13, 2010 |