FDMT80080DC Datasheet (Fairchild Semiconductor)

FDMT80080DC, MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient the

FDMT80080DC Features

* Max rDS(on) = 1.35 mΩ at VGS = 10 V, ID = 36 A

* Max rDS(on) = 1.82 mΩ at VGS = 8 V, ID = 31 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* Low