FDMS8320LDC - N-Channel Dual Cool Power Trench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMS8320LDC
Manufacturer	Fairchild Semiconductor
File Size	290.84 KB
Description	N-Channel Dual Cool Power Trench MOSFET
Datasheet	FDMS8320LDC Datasheet
Additional preview pages of the FDMS8320LDC datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. OringFET / Load Switching Synchronous Rectification DC-DC Conversion Pin 1 S D D D D S S D D G S S S Pin 1 S G Top Power 56 Bott

Features

Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A.
Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
Next generation enhanced body diode technology, engineered for soft recovery.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant General.

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Published: Aug 24, 2015 |