FDMC8678S Datasheet (Fairchild Semiconductor) - N-Channel Power Trench MOSFET

FDMC8678S, N-Channel Power Trench MOSFET

tm The FDMC8678S has been designed to minimize losses in power conversion applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

This device has the added benefit of an efficient monolith

FDMC8678S Features

* Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A

* Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* SyncFET Schottky Body Diode

* MSL1 robust package design

* RoHS Compliant ® Sy