FDMC86570LET60 - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMC86570LET60
Manufacturer	Fairchild Semiconductor
File Size	201.85 KB
Description	MOSFET
Datasheet	FDMC86570LET60 Datasheet
Additional preview pages of the FDMC86570LET60 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. DC-DC Conversion Pin 1 Pin 1 SS SG S S D D D DD D SD GD Top PPoowweerr 3333 Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage

Features

Extended TJ rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A.
Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A.
High performance technology for extremely low rDS(on).
Termination is Lead-free.
RoHS Compliant General.

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Published: Jan 10, 2017 |