FDMC86570LET60 Datasheet (Fairchild Semiconductor)

FDMC86570LET60, MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Application * DC-DC Conversion * P

FDMC86570LET60 Features

* Extended TJ rating to 175°C

* Shielded Gate MOSFET Technology

* Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A

* Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A

* High performance technology for extremely low rDS(on)

* Termination is Lead-free