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FDMA8884 - Single N-Channel PowerTrench MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.

Primary Switch Pin 1 D D G D Bottom Drain Contact D D S Drain Source D G S D D MicroFET 2X2 (Bottom View) MOSFET

Features

  • Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A.
  • Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A.
  • High performance trench technology for extremely low rDS(on).
  • Fast switching speed.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMA8884 N-Channel Power Trench® MOSFET May 2014 FDMA8884 Single N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A „ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A „ High performance trench technology for extremely low rDS(on) „ Fast switching speed „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
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