FDMA8884 - Single N-Channel PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDMA8884
Manufacturer	Fairchild Semiconductor
File Size	308.99 KB
Description	Single N-Channel PowerTrench MOSFET
Datasheet	FDMA8884-FairchildSemiconductor.pdf

FDMA8884 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance. Primary Switch Pin 1 D D G D Bottom Drain Contact D D S Drain Source D G S D D MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous -Pulsed

Features

Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A.
Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A.
High performance trench technology for extremely low rDS(on).
Fast switching speed.
RoHS Compliant General.

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Published: Oct 29, 2014 |