FDMA86265P - P-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDMA86265P
Manufacturer	Fairchild Semiconductor
File Size	635.64 KB
Description	P-Channel MOSFET
Datasheet	FDMA86265P-FairchildSemiconductor.pdf

FDMA86265P Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance. Active Clamp Switch Load Switch Pin 1 Drain DD G Source BBootttotomm DDraraininCCoonnta- ct DD DD DD S MicroFET 2X2 (Bottom View) G S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage

Features

Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A.
Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A.
Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm.
Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg.
This product is optimised for fast switching.

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Published: Jan 10, 2017 |