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FDMA1430JP - -30V -2.9A Integrated P-Channel MOSFET and BJT

Fairchild Semiconductor

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Datasheet Details

Part number	FDMA1430JP
Manufacturer	Fairchild Semiconductor
File Size	356.65 KB
Description	-30V -2.9A Integrated P-Channel MOSFET and BJT
Datasheet	FDMA1430JP-FairchildSemiconductor.pdf

FDMA1430JP Product details

Description

This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable applications.

Features

Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A.
Max rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A.
Max rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A.
Max rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1 A.
Low profile - 0.8 mm maximum - in the new package MicroFET 2x2.
HBM ESD protection level > 2 kV typical (Note 3).
RoHS Compliant General.

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Published: Aug 27, 2025 |