FDM606P Datasheet (Fairchild Semiconductor) - P-Channel 1.8V Logic Level Power Trench MOSFET

FDM606P, P-Channel 1.8V Logic Level Power Trench MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electronics application

FDM606P Features

* Fast switching

* rDS(ON) = 0.026Ω (Typ), VGS = -4.5V

* rDS(ON) = 0.033Ω (Typ), VGS = -2.5V

* rDS(ON) = 0.052Ω (Typ), VGS = -1.8V Applications

* Load switch

* Battery charge

* Battery disconnect circuits D Bottomview 3 X 2 (8 Lead) SinglePad