FDM606P - P-Channel 1.8V Logic Level Power Trench MOSFET

Fairchild Semiconductor

The FDM606P by Fairchild Semiconductor is a P-Channel 1.8V Logic Level Power Trench MOSFET. Below is the official datasheet preview.

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FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET by Fairchild Semiconductor - Datasheet Preview — Official preview page of the **FDM606P** P-Channel 1.8V Logic Level Power Trench MOSFET datasheet (Fairchild Semiconductor).

Datasheet Details

Part number	FDM606P
Manufacturer	Fairchild Semiconductor
File Size	146.19 KB
Description	P-Channel 1.8V Logic Level Power Trench MOSFET
Datasheet	FDM606P_FairchildSemiconductor.pdf
Additional preview pages of the FDM606P datasheet.

FDM606P Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

Fast switching.
rDS(ON) = 0.026Ω (Typ), VGS = -4.5V.
rDS(ON) = 0.033Ω (Typ), VGS = -2.5V.
rDS(ON) = 0.052Ω (Typ), VGS = -1.8V.

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Published: Jan 27, 2006 |