FDJ1032C Datasheet (Fairchild Semiconductor) - Complementary PowerTrench MOSFET

FDJ1032C, Complementary PowerTrench MOSFET

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications wher

FDJ1032C Features

* Q1

* 2.8 A,

* 20 V.

* Q2 3.2 A, 20 V.

* Low gate charge RDS(ON) = 160 mΩ @ VGS =

* 4.5 V RDS(ON) = 230 mΩ @ VGS =

* 2.5 V RDS(ON) = 390 mΩ @ VGS =

* 1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V

* High performance trench te