FDG6318P Datasheet (Fairchild Semiconductor) - Dual P-Channel/ Digital FET

FDG6318P, Dual P-Channel/ Digital FET

These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a replacement for bipolar dig

FDG6318P Features

* 0.5 A,

* 20 V. RDS(ON) = 780 mΩ @ VGS =

* 4.5 V RDS(ON) = 1200 mΩ @ VGS =

* 2.5 V

* Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).

* Compact industry standard SC70-6 surface mount package App