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FDG6306P - P-Channel 2.5V Specified PowerTrench MOSFET

Description

This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

12V).

Features

  • 0.6 A,.
  • 20 V.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • Compact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS =.
  • 4.5 V RDS(ON) = 630 mΩ @ V GS =.
  • 2.5 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDG6306P February 2001 FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wi th a wide range of gate drive voltage (2.5V – 12V). Features • –0.6 A, –20 V. • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS = –4.5 V RDS(ON) = 630 mΩ @ V GS = –2.5 V Applications • Battery management • Load switch S G D G 2 or 5 S 1 or 4 6 or 3 D 5 or 2 G 4 or 1 S D G Pin 1 S D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
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