FDD5N53 Datasheet PDF - Fairchild Semiconductor N-Channel MOSFET Specs

FDD5N53 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

RDS(on) = 1.25Ω ( Typ. )@ VGS = 10V, ID = 2A.
Low gate charge ( Typ. 11nC).
Low Crss ( Typ. 5pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant UniFETTM tm.

Datasheet Details

Part number	FDD5N53
Manufacturer	Fairchild Semiconductor
File Size	282.80 KB
Description	N-Channel MOSFET
Datasheet	FDD5N53 Datasheet
Additional preview pages of the FDD5N53 datasheet.

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Full PDF Text Transcription

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FDD5N53 / FDU5N53 N-Channel MOSFET January 2009 FDD5N53/FDU5N53 N-Channel MOSFET 530V, 4A, 1.5Ω Features • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.

Published: Oct 14, 2009 |