FDD5353 - MOSFET

Datasheet Summary

Description

Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and y

Features

General.

Fairchild Semiconductor

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Datasheet Details

Part number	FDD5353
Manufacturer	Fairchild Semiconductor
File Size	344.92 KB
Description	MOSFET
Datasheet	FDD5353 Datasheet
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Full PDF Text Transcription

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FDD5353 N-Channel Power Trench® MOSFET April 2015 FDD5353 N-Channel Power Trench® MOSFET 60V, 50A, 12.3m Features General Description  Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A  Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A  100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Published: Jan 11, 2017 |