FDD1600N10ALZD Datasheet (Fairchild Semiconductor)

FDD1600N10ALZD, N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.

FDD1600N10ALZD Features

* RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A

* RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A

* Low Gate Charge (Typ. 2.78 nC)

* Low Crss (Typ. 2.04 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability

* RoH