FDD050N03B - N-Channel PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDD050N03B
Manufacturer	Fairchild Semiconductor
File Size	435.12 KB
Description	N-Channel PowerTrench MOSFET
Datasheet	FDD050N03B-FairchildSemiconductor.pdf

FDD050N03B Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Synchronous Rectification for ATX / Server / Telecom PSU D D G S D-PAK (TO-252) G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter FDD050N03B VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Dr

Features

RDS(on) = 3.7 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A.
Fast Switching Speed.
Low Gate Charge, QG = 33 nC( Typ. ).
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant.

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Published: Aug 3, 2015 |