FDC8601 Datasheet (Fairchild Semiconductor) - N-Channel Shielded Gate PowerTrench MOSFET

FDC8601, N-Channel Shielded Gate PowerTrench MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Applications * Load Switch * Synchronous Rectifier *

FDC8601 Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A

* Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surf