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FDBL0110N60 - MOSFET

Features

  • Typical RDS(on) = 0.85 mΩ at VGS = 10V, ID = 80 A.
  • Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A.
  • UIS Capability.
  • RoHS Compliant.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDBL0110N60 N-Channel PowerTrench® MOSFET FDBL0110N60 N-Channel PowerTrench® MOSFET 60 V, 300 A, 1.1 mΩ January 2016 Features „ Typical RDS(on) = 0.85 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant Applications „ Industrial Motor Drive „ Industrial Power Supply „ Industrial Automation „ Battery Operated tools „ Battery Protection „ Solar Inverters „ UPS and Energy Inverters „ Energy Storage „ Load Switch D G S For current package drawing, please refer to the Fairchild website at https://www.fairchildsemi.com/evaluate/package-specifications/packageDetails.html?id=PN_PSOFA-008 MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
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