FDB8453LZ N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDB8453LZ N-Channel PowerTrench® MOSFET FDB8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 7.0mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-s.

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Datasheet Specifications

Part number: FDB8453LZ
Manufacturer: Fairchild Semiconductor
File Size: 269.80 KB
Datasheet: FDB8453LZ-FairchildSemiconductor.pdf
Description: N-Channel PowerTrench MOSFET

Features

* Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A
* Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A
* HBM ESD protection level of 7.6kV typical (note 4)
* Fast Switching

Applications

* Inverter
* Power Supplies D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon li

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FDB8453LZ N-Channel PowerTrench MOSFET Fairchild Semiconductor

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