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FDB12N50F N-Channel MOSFET

FDB12N50F Description

FDB12N50F N-Channel MOSFET November 2007 FDB12N50F N-Channel MOSFET, FRFET 500V, 11.5A, 0.7Ω .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDB12N50F Features

* RDS(on) = 0.59Ω ( Typ. )@ VGS = 10V, ID = 6A
* Low gate charge ( Typ. 21nC)
* Low Crss ( Typ. 11pF)
* Fast switching
* 100% avalanche tested
* Improve dv/dt capability

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDB12N50F-like datasheet