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FDA2712 N-Channel UltraFET Trench MOSFET

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Description

FDA2712 N-Channel UltraFET Trench MOSFET April 2007 FDA2712 N-Channel UltraFET Trench MOSFET 250V, 64A, 34mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-st.

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Datasheet Specifications

Part number
FDA2712
Manufacturer
Fairchild Semiconductor
File Size
375.62 KB
Datasheet
FDA2712_FairchildSemiconductor.pdf
Description
N-Channel UltraFET Trench MOSFET

Applications

* PDP application D G G DS TO-3PN S MOSFET Maximum Ratings Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC

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