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FCA47N60 - N-Channel MOSFET

Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 58 mΩ.
  • Ultra Low Gate Charge (Typ. Qg= 210 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 420 pF).
  • 100% Avalanche Tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET FCA47N60 / FCA47N60_F109 N-Channel SuperFET® MOSFET 600 V, 47 A, 70 mΩ September 2017 Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg= 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested Application • Solar Invertor • AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
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