Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D D
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D2-PAK
FQB Series
I2-PAK
G D S
FQI Series
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Absolute Maximum Ratings
Symbol VDSS ID www. DataSheet4U. com IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain C.
9N50C_FairchildSemiconductor.pdf
