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2N7002L - N-Channel Enhancement Mode Field Effect Transistor

Description

This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology.

This product minimizes on-state resistance while providing rugged, reliable and fast switching performance.

Features

  • High Density Cell Design for Low RDS(ON).
  • Voltage Controlled Small Signal Switch.
  • Rugged and Reliable.
  • High Saturation Current Capability.
  • Very Low Capacitance.
  • Fast Switching Speed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7002L — N-Channel Enhancement Mode Field Effect Transistor October 2014 2N7002L N-Channel Enhancement Mode Field Effect Transistor Features • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability • Very Low Capacitance • Fast Switching Speed Description This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance.
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