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2N6790 N-CHANNEL Power MOSFET

2N6790 Description

2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field.

2N6790 Features

* 3.5A, 200V
* rDS(ON) = 0.800Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device Ordering Information PART NUMBER 2N6790 PACKAGE TO-205AF BRAND

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Datasheet Details

Part number
2N6790
Manufacturer
Fairchild Semiconductor
File Size
86.16 KB
Datasheet
2N6790_FairchildSemiconductor.pdf
Description
N-CHANNEL Power MOSFET

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N-CHANNEL Power MOSFET Fairchild Semiconductor
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