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25N60N FCH25N60N

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Description

FCH25N60N * N-Channel SupreMOS® MOSFET December 2013 FCH25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 126 mΩ .
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling proce.

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Features

* RDS(on) = 108 mΩ (Typ. ) @ VGS = 10 V, ID = 12.5 A
* Ultra Low Gate Charge (Typ. Qg = 57 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 262 pF)
* 100% Avalanche Tested

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. Application
* Solar Inverter
* AC-DC Power Supply D G G D S TO-247 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL

25N60N Distributors

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📌 All Tags

25N60N FCH25N60N Fairchild Semiconductor
Fairchild Semiconductor 25N60N-like datasheet