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FNK3316 - N-Channel MOSFET

Description

Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(ON) at 4.5V VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Con

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Datasheet Details

Part number FNK3316
Manufacturer FNK
File Size 2.22 MB
Description N-Channel MOSFET
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Full PDF Text Transcription

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30V N-Channel General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 10A < 12m Ω < 15.8 mΩ FNK3316 Top View 18 27 36 45 D G S V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain CurrentG TA=25°C TA=70°C Avalanche Current C Avalanche energy L=0.
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