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FNK30H80 - N-Channel Power MOSFET

Description

The FNK30H80 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =80A RDS(ON).

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Datasheet Details

Part number FNK30H80
Manufacturer FNK
File Size 1.42 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK30H80 Datasheet

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Full PDF Text Transcription

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FNK30H80 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK30H80 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V RDS(ON) < 8.
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