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FNK2310A - N-Channel Power MOSFET

Description

The FNK2310A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V,ID = 5A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package S Schematic diagram.

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Datasheet Details

Part number FNK2310A
Manufacturer FNK
File Size 712.18 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK2310A Datasheet

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Full PDF Text Transcription

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FNK2310A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK2310A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D G General Features ● VDS = 20V,ID = 5A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.
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