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FNK22001AF - N-Channel Power MOSFET

Description

The FNK22001AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =80V,ID =180A RDS(ON).

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Datasheet Details

Part number FNK22001AF
Manufacturer FNK
File Size 1.24 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK22001AF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FNK22001AF FNK N-Channel Enhancement Mode Power MOSFET Description The FNK22001AF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =80V,ID =180A RDS(ON) <3.
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