C5147 Datasheet (FGX) - NPN silicon Transistor

C5147, NPN silicon Transistor

APPLICATION：FREQUENCY AMPLIFIER APPLICATION, C5147 NPN silicon MAXIMUM RATINGS（Ta＝25℃） PARAMETER SYMBOLRATING UNIT Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation (Ta=25℃) Collector Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature Range VCBO 300 V VCEO 300 V VEBO 5V IC 100 mA PC 2 W PC 10 W TJ 150 ℃ Tstg ﹣55~150 ℃ 1 TO-220 1.Base 2.Collector 3.Emitter