The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐20V
RDSON (MAX.)
20mΩ
ID
‐8.5A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID IDM PD Tj, Tstg
EMF20B02G
LIMITS ±12 ‐8.5 ‐6 ‐34 2 1.28
‐55 to 150
UNIT V
A
W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature. 2Duty cycle 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
TYPICAL
MAXIMUM 25 62.
EMF20B02G Datasheet
