EMF04P02H Datasheet (Excelliance MOS) - P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMF04P02H, P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMF04P02H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 5.5mΩ ID ‐72A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ‐72 ID TC = 100 °C ‐45 IDM ‐240 Avalanche Current IAS ‐48 Avalanche Energy L = 0.1mH, IAS=