Datasheet4U Logo Datasheet4U.com

EMD12N60F Datasheet - Excelliance MOS

EMD12N60F N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 0.75Ω ID 12A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 3mH, ID=12A, RG=25Ω L = 0.5mH Power Dissipation T.

EMD12N60F Datasheet (163.89 KB)

Preview of EMD12N60F PDF
EMD12N60F Datasheet Preview Page 2 EMD12N60F Datasheet Preview Page 3

Datasheet Details

Part number:

EMD12N60F

Manufacturer:

Excelliance MOS

File Size:

163.89 KB

Description:

N-channel logic level enhancement mode field effect transistor.

📁 Related Datasheet

EMD12N06A MOSFET (Excelliance MOS)

EMD12N06H MOSFET (Excelliance MOS)

EMD12N10E MOSFET (Excelliance MOS)

EMD12N10H MOSFET (Excelliance MOS)

EMD12 Power management (dual digital transistors) (Rohm)

EMD12 Dual Digital Transistors (JCET)

EMD12 General purpose transistors (Jin Yu Semiconductor)

EMD10 Dual Digital Transistors (JCET)

TAGS

EMD12N60F N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

EMD12N60F Distributor