Datasheet4U Logo Datasheet4U.com

EMD04N10E - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 4.5mΩ 6.0mΩ ID @TC=25℃ 171.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL

📥 Download Datasheet

Datasheet Details

Part number EMD04N10E
Manufacturer Excelliance MOS
File Size 467.03 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMD04N10E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
EMD10 Dual Digital Transistors JCET
EMD12 Power management (dual digital transistors) Rohm
EMD12 Dual Digital Transistors JCET
EMD12 General purpose transistors Jin Yu Semiconductor
EMD1S MINI SUPER FAST SURFACE MOUNT BRIDGE RECTIFIER Rectron

Other Datasheets by Excelliance MOS

Part Number Description
EMD04N04E MOSFET
EMD04N04H N?Channel Logic Level Enhancement Mode Field Effect Transistor
EMD04N06A N?Channel Logic Level Enhancement Mode Field Effect Transistor
EMD04N06E N?Channel Logic Level Enhancement Mode Field Effect Transistor
EMD04N06F Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 4.5mΩ 6.0mΩ ID @TC=25℃ 171.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current VGS TC = 25 °C TC = 100 °C ID Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 IAS L = 0.1mH EAS L = 0.
Published: |