EMD03N06HS Datasheet (Excelliance MOS) - N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMD03N06HS, N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 3mΩ ID 97A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMD03N06HS LIMITS UNIT Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM 97 61 A 240 Avalanche Current IAS 75 Avalanche Energy L =