Datasheet Details
| Part number | EMD02N06TL8 |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 509.46 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
|
| Part number | EMD02N06TL8 |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 509.46 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
|
N-CH BVDSS 60V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=7V ID @TC=25℃ 1.9mΩ 2.5mΩ 270A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage TC = 25 °C Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1 TC = 100 °C TA = 25 °C TA = 70 °C Avalanche Energy1 L = 0.1mH Repetitive Avalanche Energy2 L = 0.05mH Power Dis
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